Irf520p to220 nchannel power mosfet rf final and en369dr companion part. Texas instruments transistor and diode databook 1st ed 1973 datasheets for diodes from 1n251 on and transistors from 2n117 on acrobat 7 pdf 34. Although the software seems a bit ugly design running on dos, but it works perfectly with the database with many components and is free, makes an interesting tool to interested in electronics, want to know when information about a particular component or find a replacement the operation is quite simple and is separated by categories such as. Aug 08, 2016 c83 datasheet vcbo30v, npn transistor panasonic, 2sc83 datasheet, c83 pdf, c83 pinout, c83 manual, c83 schematic, c83 equivalent. Replacement and equivalent transistor for the 2sc3281. Sipmos smallsignaltransistor product summary features v. Preliminary datasheet r07ds0432ej0300 2sc12ak previous. Transistor specifications explained electronics notes. This is the document that the manufacturer provides telling you. It is recommended that transistors not be allowed to operate near these values, lest their lifespan be shortened. Transistors short lt,smd mosfet bipolar power metal can. Vmt3 emt3f sot416 sot323fl lfeatures 1 builtin biasing resistors, r1 r2 22k.
The complementary pnp transistor to the 2sc3281 is the 2sa2. Your personal data will be used to support your experience throughout this website, to manage access to your account, and for other purposes described in our privacy policy. Jan 14, 2017 that value of hfe is used for linear transistor operation calculations, where the transistor is not saturated. Hfe has minimum and maximum values, though both may not be listed. Free packages are available maximum ratings rating symbol value unit collector. Of course you need the datasheet of the transistor to design a circuit using it. Sometimes the 2s prefix is not marked on the package the 2sc3281 transistor might be marked c3281. Since the distribution of heat in the transistor crystal is not uniform and depends on voltage and. C3281 datasheet, c3281 pdf, c3281 data sheet, c3281 manual, c3281 pdf, c3281, datenblatt, electronics c3281, alldatasheet, free, datasheet, datasheets, data sheet. Free device maximum ratings rating symbol value unit collector. If you are not sure which lead is the collector and which one is the emitter, refer to the package the transistor came in or the specifications on the manufacturers website. Mps4126 amplifier transistor pnp silicon features this is a pb. Panasonic, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. C3281 datasheet, c3281 pdf, c3281 data sheet, datasheet, data sheet, pdf.
Voltage multi epitaxial planar technology for high switching speeds and high voltage capacity. The breakdown voltage is where the transistor will stop operating or be destroyed if it is given an input voltage of that amount. Transistor manufacturers issue specification sheets for their transistors which are typically found on the internet, although years ago engineers used to study data books to find out the information. It should read in the megaohm range for either direction.
R1 is not part of the transistor, its just a typical load to work against for the simulation. The datasheet shows the internals of the transistor, which looks like this a rough approximation using a typical npn r2 and r3 are internal to the transistor. High voltage fastswitching npn power transistor stmicroelectronics. These transistors are subdivided into three groups q, r and s according to their dc current gain. Emy1 umy1n fmy1a datasheet labsolute maximum ratings ta 25c parameter symbol tr1pnp tr2npn unit collectorbase voltage vcbo60 60 v collectoremitter voltage vceo50 50 v emitterbase voltage vebo6 7 v collector current ic150 150 ma power dissipation emy1 umy1n pd1 2 150 mwtotal fmy1a pd1 3 300 mwtotal junction. Pinning pin description 1 emitter 2 base 3 collector, connected to the case fig.
Field effect transistor datasheet, field effect transistor pdf, field effect transistor data sheet, datasheet, data sheet, pdf. Bc546b, bc547a, b, c, bc548b, c amplifier transistors. The required base current for good saturation is typically 110th or 120th of the collector current forced beta of 10 or 20, as shown in the data sheet where it gives the vcesat voltage. Toshiba power transistor semiconductor data book 1983 toshiba corporation 1983 acrobat 7 pdf 52. An npn transistor has the base as the middle p layer, and the emitter and collector as the two n layers sandwiching the base. Silicon npn triple diffused type power amplifier applications. Hard find electronics ltd is triodes and transistors supplier,short lt of metal can packages transistors,fleld effect transistors,bipolar transistors,voltage regulators triode,multiunits transistors,digital transistor,strong brands. This is the document that the manufacturer provides telling you the typical device performance. Silicon npn epitaxial planer transistor, un1211 datasheet, un1211 circuit, un1211 data sheet. Dynamic characteristics2 input capacitance c iss 2 176 pf output capacitance c oss 42 56 reverse transfer capacitance c rss 20 30 turnon delay time t don 8 ns rise time t r 28 46 turnoff delay time t doff 21 32 fall time t f 20 30 gate charge characteristics1,2 gate to source charge q gs 0. It is defined as a gain because a small signal at the base produces a much larger signal at the collector. Bc546b, bc547a, b, c, bc548b, c amplifier transistors npn silicon features pb. According to the datasheet 2n4401 is a general purpose npn switching transistor that features high currents up to bc556, bc557 datasheet p.
Reading transistor datasheet for saturation values all. C828 transistor datasheet npn toshiba, c828 transistor, 2sc828 datasheet, pdf, c828 pinouts, data, circuit, ic, manual, substitute, parts, schematic, reference. Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification. For example, in this p2n2222a npn transistor, i can look in the on characteristics table and see that v ce has a max of. Dtc143t series npn 100ma 50v digital transistors bias resistor builtin transistors datasheet loutline parameter value vmt3 emt3f vceo 50v ic 100ma r1 4. Here is an image showing the pin diagram of the this transistor.
That value of hfe is used for linear transistor operation calculations, where the transistor is not saturated. Ldmos rf power field effect transistor 90 w, 869960 mhz. However, in figure 4 there is a graph of i b vs v ce. Dta124e series pnp 100ma 50v digital transistor bias resistor builtin transistor datasheet loutline parameter value sot723 sot416fl vcc50v icmax. Absolute maximum ratings t a 25c unless otherwise noted. For electronic circuit design, selecting the right transistor will need several of the transistor parameters to match the requirements for the. B absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 450 v emitterbase voltage vebo 8.
According to the datasheet, the typical values are 2v for on. Directions for determining the thermal resistance rths for cooling fins can be found on page 11. How to read a datasheet prepared for the wims outreach program 5602, d. Diodes,fairchild,inflneon,ir,littelfuse,nec,on,philips,st,toshiba smd diodes. Factory drop ship smaller orders ship within 5 days in stock. Toshiba power transistor semiconductor data book 1983. On special request, these transistors can be manufactured in different pin configurations. The datasheet states the maximum allowed output current and your design should limit its. Features complementary to 2sa2 recommended for 100w high fidelity audio frequency amplifier output. Diodes and transistors pdf 28p this note covers the following topics. If a mica insulation is used, the thermal resistance of the mica washer must be added, which amounts to about 0.
Complementary to 2sa2 absolute maximum rating ta25cccc characteristic symbol rating unit collectorbase voltage collectoremitter voltage emitterbase voltage collector current dc collector dissipation. Jmnic product specification silicon npn power transistors 2sc3281 description with to3pl package complement to type 2sa2 applications power amplifier applications recommended for 100w high fidelity audio frequency amplifier output stage pinning pin description 1 base collector. For an npn, the baseemitter behaves as a forwardbiased diode and the basecollector behaves as a reversebiased diode. Grover in order to use a pic microcontroller, a flipflop, a photodetector, or practically any electronic device, you need to consult a datasheet. The datasheet states the maximum allowed output current and your design should limit its output current to less. Transistors one riverelectronic components distributor. The useful dynamic range extends to 100 ma as a switch and to 100 mhz as an amplifier.
Pnp 100ma 50v digital transistor bias resistor builtin transistor datasheet loutline parameter value sot723 sot416fl vcc50v icmax. Npn general purpose amplifier this device is designed as a general purpose amplifier and switch. May 28, 2018 c828 transistor datasheet npn toshiba, c828 transistor, 2sc828 datasheet, pdf, c828 pinouts, data, circuit, ic, manual, substitute, parts, schematic, reference. Pnp resistorequipped transistor see simplified outline, symbol and pinning for package details. The 2n3439 and 2n3440 are silicon epitaxial planar npn transistors in. C83 datasheet vcbo30v, npn transistor panasonic, 2sc83 datasheet, c83 pdf, c83 pinout, c83 manual, c83 schematic, c83 equivalent. If i look at the plot for i c 150ma, and then go to i b 15ma, i see v ce. I get datasheets from your circuit design determines the output current. Dtc143tm dtc143teb sc105aa sc89 emt3 umt3f lfeatures 1 builtin biasing resistor. Free packages are available maximum ratings rating symbol value unit collector emitter voltage bc546 bc547 bc548 vceo 65 45 30 vdc collector base voltage bc546 bc547 bc548 vcbo 80 50 30 vdc emitter base voltage vebo 6. St 2sc828 828a npn silicon epitaxial planar transistor for switching and af amplifier applications.